This solution unfortunately increases the complexity of the fabrication processes. Currently, the CMOS industry solves this issue by using a 3-dimensional “FIN” structure that allows the gate grabbing around the channel to enhance its control 2. One of the main issues is the short channel effect that the transistor gate loses control as the size becomes smaller, resulting in malfunctions. The main driving force of this development is the constant downscaling of CMOS transistors, which, however, has become increasingly difficult. The successful development of the complementary metal-oxide-semiconductor (CMOS) technology in the past decades has generated a huge impact on the human society by offering devices with higher performances at lower cost 1.
